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| MMBT5088 MMBT5089 Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free 1 BASE 2 EMITTER COLLECTOR 3 3 1 2 SOT-23 Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Symbol V CE O V CB O VE B O IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc m Adc Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient Total Device Dis s ipation Alum ina S ubs trate, (2 ) T A=2 5 C Derate above 2 5 C Ther m al Res is tance, J unction to Am bient J unction and S torage, Tem perature Symbol PD R JA PD R JA T J, Ts tg Max 225 1.8 556 300 2.4 417 -5 5 to +1 5 0 Unit mW m W/ C C/ W mW m W/ C C/ W C Device Marking MMBT5088=1Q ; MMBT5089=1R Electrical Characteristics (TA=25C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collent-Emitter Breakdown Voltage IC = 1.0mA, IB=0 MMBT5088 IC = 1.0mA, IB=0 MMBT5089 Collent-Base Breakdown Voltage IC = 100A, IE=0 IC = 100A, IE=0 Collent Cutoff Current VCB = 20V, IE=0 VCB = 15V, IE=0 Emitte Cutoff Current VEB(off) = 3.0V, IC=0 VEB(off) = 4.5V, IC=0 MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 V(B R )CE O 30 25 35 30 50 50 50 100 V V(B R )CB O V nA nA I CB O IE B O 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw 1/5 13-Jan-06 MMBT5088 MMBT5089 Electrical Characteristics (TA=25C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics DC Current Gain VCE = 5.0V, IC = 100A VCE= 5.0V, IC= 1.0mA VCE= 5.0V, IC= 10mA MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) 300 400 350 450 300 400 - 900 1200 0.5 0.8 - Collector-Emitter Saturation Voltage IC = 100mA, IB = 1.0mA Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA V - V Small-signal Characteristics Current-Gain-Bandwidth Product VCE= 5.0V, IC = 500A, f=20MHz) Collector-Base Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded Emitter-Base Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded Small-Signal Current Gain VCE= 5.0V, IC=1.0 mA, f=1.0 kHz Noise Figure VCE = 5.0V, IC = 100 A, RS=1.0k ohms, f=1.0kHz fT Ccb Ceb 50 4.0 10 MHz pF pF MMBT5088 MMBT5089 MMBT5088 MMBT5089 hfe 350 450 - 1400 1800 3.0 2.0 - NF dB RS in ~ en IDEAL TRANSISTOR Fig 1.Transistor Noise Model WEITRON http://www.weitron.com.tw 2/5 13-Jan-06 MMBT5088 MMBT5089 NOISE CHARACTERISTICS NOISE VOLTAGE 30 30 (V CE = 5.0 Vdc, T A = 25C) BANDWIDTH=1.0Hz e n , NOISE VOLTAGE (nV) I C = 10 mA 3.0mA 1.0mA R S~ 0 ~ e n , NOISE VOLTAGE (nV) 20 20 BANDWIDTH=1.0Hz R S~ 0 ~ f = 10Hz 100Hz 10kHz 1.0kHz 10 7.0 5.0 10 7.0 5.0 3.0 300A 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 3.0 100kHz 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 Fig 2. Effects of Frequency 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 f, FREQUENCY (Hz) Fig 3. Effects of Collector Current 20 I C , COLLECTOR CURRENT (mA) BANDWIDTH=1.0Hz I n , NOISE CURRENT (pA) NF, NOISE FIGURE (dB) I C=10mA 3.0mA 1.0mA 300A 100A R S~ 0 ~ 10 20 50 100 16 BANDWIDTH=10 Hz to15.7 kHz 12 I C =1.0 mA 8.0 500A 100A 10A 4.0 10A 200 5001.0k 30A 2.0k 5.0k 10k 20k 50k100k 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k Fig 4. Noise Current f, FREQUENCY (Hz) Fig 5. Wideband Noise Figure 100 Hz NOISE DATA R S , SOURCE RESISTANCE (OHMS) V T , TOTAL NOISE VOLTAGE (nV) 300 200 100 70 50 30 20 10 7.0 5.0 3.0 20 BANDWIDTH=1.0Hz 100A 3.0mA 1.0mA 300A I C =10mA NF, NOISE FIGURE (dB) 16 I C = 10mA 3.0mA 1.0mA 300A 12 30A 10A 8.0 100A 4.0 30A BANDWIDTH=1.0Hz 10A 0 10 20 50 100 200 5001.0k 2.0k 5.0k 10k 20k 50k100k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Fig 6. Total Noise Voltage R S , SOURCE RESISTANCE (OHMS) R S , SOURCE RESISTANCE (OHMS) Fig 7. Noise Figure WEITRON http://www.weitron.com.tw 3/5 13-Jan-06 MMBT5088 MMBT5089 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 2.0 V CE =5.0 V T A=125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 -55C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) Fig 8. DC Current Gain R VBE , BASE- EMITTER TEMPERATURE COEFFICIENT (mV/ C) 1.0 -0.4 T J =25C V, VOLTAGE (VOLTS) 0.8 -0.8 0.6 V BE @V CE = 5.0V -1.2 0.4 -1.6 T J=25C to 125C 0.2 -2.0 0 0.01 0.02 V CE(sat) @ I C /I B =10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 -55C to25C 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.05 -0.4 0.01 0.02 I C , COLLECTOR CURRENT (mA) Fig 9. "On" Voltages 0.8 0.6 500 I C , COLLECTOR CURRENT (mA) Fig 10. Temperature Coefficients T J = 25C C ob C eb C cb C ib f T , CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 300 200 0.4 0.3 0.2 100 70 50 V CE = 5.0 V 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 T J = 25C 1.0 2.0 5.0 10 20 50 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Fig 11. Capacitance Fig 12. Current-Gain - Bandwidth Product WEITRON http://www.weitron.com.tw 4/5 13-Jan-06 MMBT5088 MMBT5089 SOT-23 Package Outline Dimension SOT-23 A TOP VIEW B C D E G H K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw 5/5 13-Jan-06 |
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